这种材料是一种叫做镓锰砷化物的东东.The material is a semiconductor called gallium manganese arsenide.实验发现气凝法生成的氮化镓奈米微粒以均匀的圆球形分布.The NC GaN has a uniform size distribution and spherical shape.实验结果于印刷电路板 、 低温共烧陶瓷 、 与单晶砷化镓基板上实现.Experiments ...
介绍了一种氧化铝生产流程中回收镓的新方法 ——— 三段碳酸化法.A new method, three stage carbonization process, to reclaim gallium from alumna production is introduced.在砷化镓衬底上异质外延磷化镓的表面缺陷与绿色发光管 ( 摘要 )Surface Defects of Heteroepitaxial Layers of GaP on...